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| LED - Chip Preliminary Radiation Red Type Point Source 10.04.2007 Technology AlInGaP/GaAs ELC-630-29-10 rev. 02/06 Electrodes N (cathode) up typ. dimensions (m) 290 O 28 - 2 +3 typ. thickness 170 (20) m 230 - 10 + 20 115 cathode gold alloy, 1.5 m anode gold alloy, 0.5 m R 85 115 350 - 10 + 20 PS-05 Maximum Ratings Tamb = 25C, unless otherwise specified Test Parameter conditions Forward current (DC) 170 Symbol Min Typ Max Unit IF 7 mA Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Test Parameter conditions Forward voltage Reverse voltage Radiant power* Luminous intensity* Peak wavelength Spectral bandwidth at 50% Switching time IF = 5 mA IR = 10 A IF = 5 mA IF = 5 mA IF = 5 mA IF = 5 mA IF = 5 mA Symbol Min Typ Max Unit VF VR e IV P 0.5 tr, tf 5 55 2.0 625 2.3 2.6 V V 70 3.0 630 25 40/30 635 W mcd nm nm ns *Measured on bare chip on TO-18 header with EPIGAP equipment Labeling Type ELC-630-29-10 Lot N IV(typ) [mcd] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1 |
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